In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates.

Details

Language :

English

ISSN :

18626351

Volume :

9

Issue :

3/4

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

73760567

Full Text :

https://doi.org/10.1002/pssc.201100502