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Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs.

Authors :
Xu, Nuo
Ho, Byron
Andrieu, François
Smith, Lee
Nguyen, Bich-Yen
Weber, Olivier
Poiroux, Thierry
Faynot, Olivier
Liu, Tsu-Jae King
Source :
IEEE Electron Device Letters; Mar2012, Vol. 33 Issue 3, p318-320, 3p
Publication Year :
2012

Abstract

The impact of body-thickness scaling on strain-induced carrier-mobility enhancement in thin-body CMOSFETs with high-k/metal gate stacks, based on quantum-mechanical simulations calibrated with measured data, is presented to provide insight into device performance enhancement trends for future technology nodes. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
METAL oxide semiconductor field-effect transistors
ELECTRON mobility
STRAINS & stresses (Mechanics)
THICKNESS measurement
GATE array circuits
QUANTUM theory
SIMULATION methods & models
DIELECTRICS

Details

Language :
English
ISSN :
07413106
Volume :
33
Issue :
3
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
73603806
Full Text :
https://doi.org/10.1109/LED.2011.2179113
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