Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures.

Authors :: Mosca, D. H.
Schreiner, W. H.
Kakuno, E. M.
Mazzaro, I.
Silveira, E.
Etgens, V. H.
Eddrief, M.
Zanelatto, G.
Galzerani, J. C.
Source :: Journal of Applied Physics; 10/1/2002, Vol. 92 Issue 7, p3569, 4p, 3 Graphs
Publication Year :: 2002
Abstract: The thermal evolution of a ZnSe epilayer grown by molecular beam epitaxy on GaAs(001) has been studied by high resolution x-ray diffraction as well as photoelectron and Raman spectroscopies. Sequential annealing of a relaxed epilayer reveals a fast migration of Ga towards the ZnSe cap layer with a significant accumulation of As atoms near the ZnSe-reacted interface. A Ga[sub 2]Se[sub 3] compound appears as a predominant byproduct whereas Zn atoms are probably diffusing from the reacted interface into the GaAs substrate. [ABSTRACT FROM AUTHOR]