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Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures.
- Source :
- Journal of Applied Physics; 10/1/2002, Vol. 92 Issue 7, p3569, 4p, 3 Graphs
- Publication Year :
- 2002
-
Abstract
- The thermal evolution of a ZnSe epilayer grown by molecular beam epitaxy on GaAs(001) has been studied by high resolution x-ray diffraction as well as photoelectron and Raman spectroscopies. Sequential annealing of a relaxed epilayer reveals a fast migration of Ga towards the ZnSe cap layer with a significant accumulation of As atoms near the ZnSe-reacted interface. A Ga[sub 2]Se[sub 3] compound appears as a predominant byproduct whereas Zn atoms are probably diffusing from the reacted interface into the GaAs substrate. [ABSTRACT FROM AUTHOR]
- Subjects :
- ZINC selenide
HETEROSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 92
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7355415
- Full Text :
- https://doi.org/10.1063/1.1504175