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Process-Introduced Structural Defects and Junction Characteristics in N P N Silicon Epitaxial Planar Transistors.
- Source :
- Journal of Applied Physics; Jun1965, Vol. 36 Issue 6, p1967-1973, 7p
- Publication Year :
- 1965
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 36
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 73378545
- Full Text :
- https://doi.org/10.1063/1.1714384