Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beam.

MLA

Yamada, I., et al. “Epitaxial Growth of Al on Si(111) and Si(100) by Ionized-Cluster Beam.” Journal of Applied Physics, vol. 56, no. 10, Nov. 1984, pp. 2746–50. EBSCOhost, https://doi.org/10.1063/1.333805.

APA

Yamada, I., Inokawa, H., & Takagi, T. (1984). Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beam. Journal of Applied Physics, 56(10), 2746–2750. https://doi.org/10.1063/1.333805

Chicago

Yamada, I., H. Inokawa, and T. Takagi. 1984. “Epitaxial Growth of Al on Si(111) and Si(100) by Ionized-Cluster Beam.” Journal of Applied Physics 56 (10): 2746–50. doi:10.1063/1.333805.