Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beam.

Details

Language :

English

ISSN :

00218979

Volume :

56

Issue :

10

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

73372396

Full Text :

https://doi.org/10.1063/1.333805