Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3μm.

Authors :: Tsyrlin, G. É.
Polyakov, N. K.
Egorov, V. A.
Petrov, V. N.
Volovik, B. V.
Sizov, D. S.
Tsatsul’nikov, A. F.
Ustinov, V. M.
Source :: Technical Physics Letters; May2000, Vol. 26 Issue 5, p423, 3p
Publication Year :: 2000
Abstract: The optical properties of multilayer structures with quantum dots in the heteroepitaxial InAs/GaAs system have been studied. The structures were obtained by the method of submonolayer migration-stimulated epitaxy. It is shown that the optimized growth conditions provide room-temperature luminescence at a wavelength of 1.3 µm. [ABSTRACT FROM AUTHOR]

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