Enhancement of the efficiency of i–n-GaN light-emitting diodes by electrochemical etching.

An investigation was made of the electrochemical etching of i-n-GaN light-emitting diode structures in aqueous solutions of KOH and NaOH to remove parasitic low-resistivity layers and inclusions in the structures which shunt the active current flow channels through the structures and lower the electroluminescence intensity. The electroluminescence intensity of the structures increased by two or three orders of magnitude during the etching process. [ABSTRACT FROM AUTHOR]