Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm.

Authors :: Ustinov, V. M.
Kovsh, A. R.
Zhukov, A. E.
Egorov, A. Yu.
Ledentsov, N. N.
Lunev, A. V.
Shernyakov, Yu. M.
Maksimov, M. V.
Tsatsul’nikov, A. F.
Volovik, B. V.
Kop’ev, P. S.
Alferov, Zh. I.
Source :: Technical Physics Letters; Jan98, Vol. 24 Issue 1, p22, 2p
Publication Year :: 1998
Abstract: The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantumdot states at the 1.84 µm wavelength (77 K) was obtained for the first time at a threshold current density of 64 A/cm². [ABSTRACT FROM AUTHOR]