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Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures.
- Source :
- Semiconductors; Oct97, Vol. 31 Issue 10, p1046, 3p
- Publication Year :
- 1997
-
Abstract
- The electroluminescence of the single unconfined type-II heterojunction p-GaInAsSb/p-InAs was investigated in the temperature range T = 4.2-77 K. As the temperature was reduced below T = 77 K, the luminescence bands with maxima at 311 meV (band A) and 384 meV (band B) were found to shift toward higher energies. At 4.2 K, the short-wave band split into two bands, B[sub 1] and B[sub 2]. These results are explained in terms of a model involving recombinations of electrons from the conduction band to an acceptor level of InAs, and also recombinations of electrons and holes localized in self-consistent quantum wells on either side of the heterojunction. [ABSTRACT FROM AUTHOR]
- Subjects :
- HETEROSTRUCTURES
ELECTROLUMINESCENCE
LIQUID helium
Subjects
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 31
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 7318577
- Full Text :
- https://doi.org/10.1134/1.1187022