Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix.

MLA

Zhukov, A. E., et al. “Influence of Growth Conditions on the Formation and Luminescence Properties of InGaAs Quantum Dots in a Si Matrix.” Semiconductors, vol. 33, no. 2, Feb. 1999, p. 165. EBSCOhost, https://doi.org/10.1134/1.1187664.

APA

Zhukov, A. E., Egorov, A. Y., Kovsh, A. R., Ustinov, V. M., Ledentsov, N. N., Maksimov, M. V., Tsatsul, nikov, A. F., Volovik, B. V., Kop, ev, P. S., & Alferov, Z. I. (1999). Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix. Semiconductors, 33(2), 165. https://doi.org/10.1134/1.1187664

Chicago

Zhukov, A. E., A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, nikov, A. F. Tsatsul, B. V. Volovik, ev, P. S. Kop, and Zh. I. Alferov. 1999. “Influence of Growth Conditions on the Formation and Luminescence Properties of InGaAs Quantum Dots in a Si Matrix.” Semiconductors 33 (2): 165. doi:10.1134/1.1187664.