Effect of the Landau level broadening on the quantum Hall conductance.

In a previous paper, Kliros et al. presented a model calculation of the Hall conductivity as a function of the Landau level broadening Γ for finite temperatures. In this paper, the effect of Landau-level broadening on the structure of the Hall conductivity is investigated. The experimental data regarding the Si-MOSFET and GaAs-heterostructure experiments are reproduced including a functional dependence of Γ on the magnetic field. The influence of the effective g-factor is considered as well. [ABSTRACT FROM AUTHOR]