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Spin Relaxation in Asymmetrical Heterostructures.

Authors :
Averkiev, N. S.
Golub, L. E.
Willander, M.
Source :
Semiconductors; Jan2002, Vol. 36 Issue 1, p91, 7p
Publication Year :
2002

Abstract

Electron spin relaxation by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical III-V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-ordersof-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10637826
Volume :
36
Issue :
1
Database :
Complementary Index
Journal :
Semiconductors
Publication Type :
Academic Journal
Accession number :
7292727
Full Text :
https://doi.org/10.1134/1.1434520