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Spin Relaxation in Asymmetrical Heterostructures.
- Source :
- Semiconductors; Jan2002, Vol. 36 Issue 1, p91, 7p
- Publication Year :
- 2002
-
Abstract
- Electron spin relaxation by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical III-V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-ordersof-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments. [ABSTRACT FROM AUTHOR]
- Subjects :
- HETEROSTRUCTURES
SPIN-lattice relaxation
Subjects
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 36
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 7292727
- Full Text :
- https://doi.org/10.1134/1.1434520