Composition dependence of photoluminescence of AlxGa1-xAs grown by molecular beam epitaxy.

Details

Language :

English

ISSN :

00218979

Volume :

55

Issue :

10

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

72872128

Full Text :

https://doi.org/10.1063/1.332930