A study of Si plasma etching in CF4+O2 gas with a planar-type reactor.

Details

Language :

English

ISSN :

00218979

Volume :

54

Issue :

5

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

72870721

Full Text :

https://doi.org/10.1063/1.332298