The mechanism of the enhancement of divacancy production by oxygen during electron irradiation of silicon. II. Computer modeling.

Details

Language :

English

ISSN :

00218979

Volume :

54

Issue :

1

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

72870377

Full Text :

https://doi.org/10.1063/1.331728