Cite
The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide.
MLA
Jahnel, F., et al. “The Behavior of Boron (Also Arsenic) in Bilayers of Polycrystalline Silicon and Tungsten Disilicide.” Journal of Applied Physics, vol. 53, no. 11, Nov. 1982, pp. 7372–78. EBSCOhost, https://doi.org/10.1063/1.330105.
APA
Jahnel, F., Biersack, J., Crowder, B. L., d’Heurle, F. M., Fink, D., Isaac, R. D., Lucchese, C. J., & Petersson, C. S. (1982). The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide. Journal of Applied Physics, 53(11), 7372–7378. https://doi.org/10.1063/1.330105
Chicago
Jahnel, F., J. Biersack, B. L. Crowder, F. M. d’Heurle, D. Fink, R. D. Isaac, C. J. Lucchese, and C. S. Petersson. 1982. “The Behavior of Boron (Also Arsenic) in Bilayers of Polycrystalline Silicon and Tungsten Disilicide.” Journal of Applied Physics 53 (11): 7372–78. doi:10.1063/1.330105.