Electrical activation process of phosphorus atoms with annealing for doped CVD poly-Si.

Details

Language :

English

ISSN :

00218979

Volume :

50

Issue :

11

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

72866602

Full Text :

https://doi.org/10.1063/1.325805