Influence of impurities and crystalline defects on electron mobility in heavily doped silicon.

Details

Language :

English

ISSN :

00218979

Volume :

50

Issue :

3

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

72865697

Full Text :

https://doi.org/10.1063/1.326119