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Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidation.
- Source :
- Journal of Applied Physics; Mar1973, Vol. 44 Issue 3, p1302-1306, 5p
- Publication Year :
- 1973
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 44
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 72861088
- Full Text :
- https://doi.org/10.1063/1.1662344