Effects of Spatial Dependence of Recombination Centers on the I-V Characteristics of p-n Junctions.

Details

Language :

English

ISSN :

00218979

Volume :

40

Issue :

10

Database :

Complementary Index

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

72859975

Full Text :

https://doi.org/10.1063/1.1657150