Back to Search
Start Over
Au gettering by Ne and Ar implantation in silicon.
- Source :
- Applied Physics. A, Solids & Surfaces; 1984, Vol. 35 Issue 2, p119-124, 6p
- Publication Year :
- 1984
-
Abstract
- The gettering efficiency for Au induced by Ne and Ar implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne and Ar ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07217250
- Volume :
- 35
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Applied Physics. A, Solids & Surfaces
- Publication Type :
- Periodical
- Accession number :
- 72439516
- Full Text :
- https://doi.org/10.1007/BF00620641