Regrowth-process study of amorphous BF ion-implanted silicon layers through spectroscopic ellipsometry.

The recrystallization kinetics of BF ion-implanted silicon has been studied by means of spectroscopic ellipsometry. It has been found that the dielectric constant of the implanted layers depends on the energy, dose and ion-beam current. The activation energy of the regrowth process increases with ion peak concentration becoming saturated for the largest implanted doses. In the largest-dose samples implanted at low current a significant decrease of the regrowth rate was detected when the recrystallization front crosses the peak of the impurity distribution. [ABSTRACT FROM AUTHOR]