CW CO-laser annealing of arsenic implanted silicon.

CW CO-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10 cm was obtained for 1×10 cm implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min. [ABSTRACT FROM AUTHOR]