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Electrical and optical properties of GaN films implanted with Mn and Co.

Authors :
Polyakov, A. Y.
Smirnov, N. B.
Govorkov, A. V.
Pashkova, N. Y.
Kim, J.
Ren, F.
Overberg, M. E.
Thaler, G. T.
Abernathy, C. R.
Pearton, S. J.
Wilson, R. G.
Source :
Journal of Applied Physics; 9/15/2002, Vol. 92 Issue 6, p3130, 7p, 12 Graphs
Publication Year :
2002

Abstract

Optical transmission spectra, microcathodoluminescence spectra, capacitance-voltage and capacitance-frequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of Mn (3 × 10[sup 16] and 4 × 10[sup 16] cm[sup -2]) and Co (4 &times ; 10[sup 16] cm[sup -2]). From optical transmission it was found that Mn forms a deep acceptor near Ev + 1.8 eV while the Co acceptor is about 0.1 eV deeper. In addition, Mn and Co form complexes with native defects and these complexes are deep electron traps with a level near Ec-0.5 eV. Such complexes are most likely responsible for a strong blue luminescence band with energy near 2.9 eV. Adjacent to the implanted region a defect region about 1 µm deep is formed, most likely by out-diffusion of point defects from the implanted zone during the 700°C annealing used to partially remove the radiation damage. This region is characterized by a high density of electron traps at Ec-0.25 eV and Ec-0.7 eV and hole traps at Ev + 0.2 eV, Ev + 0.35 eV and Ev + 0.45 eV. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
92
Issue :
6
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7240590
Full Text :
https://doi.org/10.1063/1.1499977