Low Si-contamination GaP LPE layers grown at 650 °C from indium solvent.

Details

Language :

English

ISSN :

00036951

Volume :

33

Issue :

2

Database :

Complementary Index

Journal :

Applied Physics Letters

Publication Type :

Academic Journal

Accession number :

71738092

Full Text :

https://doi.org/10.1063/1.90300