Comparison of interface-state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation.

Details

Language :

English

ISSN :

00036951

Volume :

28

Issue :

10

Database :

Complementary Index

Journal :

Applied Physics Letters

Publication Type :

Academic Journal

Accession number :

71736676

Full Text :

https://doi.org/10.1063/1.88592