Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH).

In this study, the use of a novel phosphorous precursor for low pressure metalorganic vapor phase epitaxy (LP-MOVPE) application has been investigated. Ditertiarybutyl phosphine ((CH)-P-H, DitBuPH) as substitute for the standardly used hydrid gas phosphine (PH) promises apart from strongly reduced toxicity due to the reduction of P-H bonds, an enhancement in cracking efficiency as well as a reduction in growth temperature. Layer quality has been examined by means of optical and scanning electron microscopy (SEM), temperature-dependent van der Pauw Hall as well as photoluminescence (PL) measurements. Uncompensated n-type InP-layers (1.0 x 1.5 cm; 59600 cmVs) at 77K) are realized using DitBuPH in combination with commercial TMIn. All results are compared with those obtained by using PH and commercial tertiarybutyl phosphine (TBP) as P-source, respectively. [ABSTRACT FROM AUTHOR]