Back to Search
Start Over
Application of low temperature GaAs to GaAs/Si.
- Source :
- Journal of Electronic Materials; Dec1993, Vol. 22 Issue 12, p1511-1514, 4p
- Publication Year :
- 1993
-
Abstract
- Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 10 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 22
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 71642603
- Full Text :
- https://doi.org/10.1007/BF02650010