Evidence of interaction between two DX centers in N-Type AlGaAs from RDLTS and temperature dependent pulse-width DLTS measurements.

Two well-separated electron traps with activation energies: E ≊ 0.286 eV and E ≊ 0.433 eV have been consistently detected in the n-type AlGaAs confinement layer of AlGaAs/GaAs single quantum well laser diodes. The physical characteristic parameters for these two traps, including capture cross section, emission time constant, and capture time constant, have been calculated. Reverse-bias pulsed deep level transient spectroscopy (RDLTS) results provide the evidence for the first time that these two traps have strong interaction during emission processes. This allows us to conclude that E and E are indeed both donor-unknown centers. Furthermore, using a temperature-dependent pulse-width method, DLTS signals from E alone can be obtained. The corrected activation energy appears to be a little shallower at E ≊ 0.265 eV. [ABSTRACT FROM AUTHOR]