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Migration of implanted indium in silicon as a function of thermal annealing.
- Source :
- Applied Physics Letters; 1983, Vol. 42 Issue 7, p575-577, 3p
- Publication Year :
- 1983
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 42
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71388244
- Full Text :
- https://doi.org/10.1063/1.94006