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Raman scattering characterization of Ga1-xAlxAs/GaAs heterojunctions: Epilayer and interface.
- Source :
- Applied Physics Letters; 1982, Vol. 41 Issue 10, p961-963, 3p
- Publication Year :
- 1982
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 41
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71387688
- Full Text :
- https://doi.org/10.1063/1.93356