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The annealing behavior of antimony implanted polycrystalline silicon.

Authors :
Tandon, J. L.
Harrison, H. B.
Neoh, C. L.
Short, K. T.
Williams, J. S.
Source :
Applied Physics Letters; 1982, Vol. 40 Issue 3, p228-230, 3p
Publication Year :
1982

Details

Language :
English
ISSN :
00036951
Volume :
40
Issue :
3
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
71386519
Full Text :
https://doi.org/10.1063/1.93055