Transport properties of GaAs-AlxGa1-x As heterojunction field-effect transistors.

Details

Language :

English

ISSN :

00036951

Volume :

39

Issue :

9

Database :

Complementary Index

Journal :

Applied Physics Letters

Publication Type :

Academic Journal

Accession number :

71386155

Full Text :

https://doi.org/10.1063/1.92858