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Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interface.
- Source :
- Applied Physics Letters; 1981, Vol. 39 Issue 6, p493-495, 3p
- Publication Year :
- 1981
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 39
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71385989
- Full Text :
- https://doi.org/10.1063/1.92771