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Isoelectronic traps in GaAs0.6P0.4 by nitrogen implantation and CO2-laser annealing.

Authors :
Takai, M.
Ryssel, H.
Source :
Applied Physics Letters; 1979, Vol. 35 Issue 9, p696-698, 3p
Publication Year :
1979

Details

Language :
English
ISSN :
00036951
Volume :
35
Issue :
9
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
71382988
Full Text :
https://doi.org/10.1063/1.91258