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Isoelectronic traps in GaAs0.6P0.4 by nitrogen implantation and CO2-laser annealing.
- Source :
- Applied Physics Letters; 1979, Vol. 35 Issue 9, p696-698, 3p
- Publication Year :
- 1979
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 35
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71382988
- Full Text :
- https://doi.org/10.1063/1.91258