Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals.

Spatially resolved electrical and spectroscopic behavior around isolated grown-in dislocation in p-type undoped GaAs crystals grown by liquid-encapsulated Czochralski technique is investigated. Surface spreading resistance is found to remarkably increase at about 100 μm in diameter around dislocations. In a corresponding area, photoluminescence intensity of the 1.49-eV and 1.44-eV acceptor level peaks decreases. However, that of 0.8-eV deep level peak does not vary. These results demonstrate that dislocations should give rise to carrier density variation due to the relative concentration change of levels around them. [ABSTRACT FROM AUTHOR]