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X-ray study on impurity diffusion in a GaAs-AlAs superlattice.

Authors :
Terauchi, H.
Sekimoto, S.
Sano, N.
Kato, H.
Nakayama, M.
Source :
Applied Physics Letters; 1984, Vol. 44 Issue 10, p971-973, 3p
Publication Year :
1984

Abstract

The mechanism of Zn diffusion in a GaAs-AlAs superlattice has been studied by measuring the x-ray satellite intensity. The satellite intensity decreases and its width increases with increasng annealing time. The local structure around Zn atom is discussed. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
ZINC
SUPERLATTICES
ANNEALING of metals
ATOMS
SQUARE waves

Details

Language :
English
ISSN :
00036951
Volume :
44
Issue :
10
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
71380565
Full Text :
https://doi.org/10.1063/1.94615
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