Hot electrons in modulation-doped GaAs-AlGaAs heterostructures.

Authors :: Shah, Jagdeep
Pinczuk, A.
Störmer, H. L.
Gossard, A. C.
Wiegmann, W.
Source :: Applied Physics Letters; 1984, Vol. 44 Issue 3, p322-324, 3p
Publication Year :: 1984
Abstract: We have investigated electric field heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures by simultaneous measurement of luminescence and mobility. We find that hot electrons have a Fermi-Dirac distribution function for fields up to 750 V/cm and that the high field mobility of electrons can be understood in terms of field-induced electron heating and the temperature dependence of low field mobility. [ABSTRACT FROM AUTHOR]