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Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)As.
- Source :
- Applied Physics Letters; 1984, Vol. 44 Issue 1, p139-141, 3p
- Publication Year :
- 1984
-
Abstract
- The temperature dependence of the mobility of two-dimensional hole systems at modulation-doped GaAs-(AlGa)As heterojunctions is determined. Its shape follows closely the equivalent curve for high-purity p-type bulk GaAs. Low-temperature mobilities beyond 4×104 cm2/Vs are found for areal hole densities of 5×1011 cm-2. The equivalent scattering times reach those of the best modulation-doped electron systems. In the temperature range where acoustic mode scattering prevails a T-3/4 dependence was observed. Studies under light illumination could not detect any persistent photoconductive effect in two-dimensional holes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 44
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71379802
- Full Text :
- https://doi.org/10.1063/1.94580