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High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure.
- Source :
- Applied Physics Letters; 1984, Vol. 44 Issue 1, p16-18, 3p
- Publication Year :
- 1984
-
Abstract
- A new type of high-speed optical modulator is proposed and demonstrated. An electric field is applied perpendicular to GaAs/GaAlAs multiple quantum well layers using a ''p-i-n'' diode doping structure of 4-μm total thickness. The optical absorption edge, which is particularly abrupt because of exciton resonances, shifts to longer wavelengths with increasing field giving almost a factor of 2 reduction in transmission at 857 nm with an 8-V reverse bias. The shifts are ascribed to changes in carrier confinement energies in the wells. The observed switching time of 2.8 ns is attributed to RC time constant and instrumental limitations only, and fundamental limits may be much faster. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRONIC modulators
GALLIUM arsenide
QUANTUM wells
DIODES
WAVELENGTHS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 44
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71379796
- Full Text :
- https://doi.org/10.1063/1.94586