Back to Search
Start Over
Noise Margin and Leakage in Ultra-Low Leakage SRAM Cell Design.
- Source :
- IEEE Transactions on Electron Devices; Aug2002, Vol. 49 Issue 8, p1499, 3p, 1 Diagram, 4 Graphs
- Publication Year :
- 2002
-
Abstract
- Reports on calculations and measurements of static noise margin, performance and leakage for 0.18 and 0.13-μ m ultra-low power static random-access memories cell designs. Discussion on static noise margin; Cell leakage, cell performance and threshold voltage uncertainty.
- Subjects :
- NOISE
RANDOM noise theory
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 7107671
- Full Text :
- https://doi.org/10.1109/TED.2002.801433