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Two-Dimensional Self-Consistent Simulation of a Triangular P-Channel SOI Nano-Flash Memory Device.
- Source :
- IEEE Transactions on Electron Devices; Aug2002, Vol. 49 Issue 8, p1420, 7p, 6 Diagrams, 3 Graphs
- Publication Year :
- 2002
-
Abstract
- Presents the simulation of a silicon-on-insulator nano-flash memory device. Simulation procedure; Device fabrication; Memory operation; Conclusion.
- Subjects :
- SILICON-on-insulator technology
SEMICONDUCTOR storage devices
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 7107658
- Full Text :
- https://doi.org/10.1109/TED.2002.801307