Cover Picture: Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO2 support (Phys. Status Solidi RRL 2/2012).

MLA

Nourbakhsh, Amirhasan, et al. “Cover Picture: Tunable n- and p-Type Doping of Single-Layer Graphene by Engineering Its Interaction with the SiO2 Support (Phys. Status Solidi RRL 2/2012).” Physica Status Solidi - Rapid Research Letters, vol. 6, no. 2, Feb. 2012, p. n/a. EBSCOhost, https://doi.org/10.1002/pssr.201105429.

APA

Nourbakhsh, A., Cantoro, M., Li, B., Müller, R., De Feyter, S., Heyns, M. M., Sels, B. F., & De Gendt, S. (2012). Cover Picture: Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO2 support (Phys. Status Solidi RRL 2/2012). Physica Status Solidi - Rapid Research Letters, 6(2), n/a. https://doi.org/10.1002/pssr.201105429

Chicago

Nourbakhsh, Amirhasan, Mirco Cantoro, Bing Li, Robert Müller, Steven De Feyter, Marc M. Heyns, Bert F. Sels, and Stefan De Gendt. 2012. “Cover Picture: Tunable n- and p-Type Doping of Single-Layer Graphene by Engineering Its Interaction with the SiO2 Support (Phys. Status Solidi RRL 2/2012).” Physica Status Solidi - Rapid Research Letters 6 (2): n/a. doi:10.1002/pssr.201105429.