Design of All-Optical Loadable and Erasable Memory Cell by LWI and EIT Effects.

We have designed a loadable and erasable all optical memory unit cell by using two coupled micro-ring resonators structure. To read out stored data we have created additional phase in the upper ring by electromagnetically induced transparency (EIT) phenomenon induced by inserted Λ-type three level quantum dots in the right hand half of the upper ring. Also, for compensating the fiber loss, we have used lasing without inversion (LWI) by inserted Y-type four level QDs in the left hand half of the both rings. This optical memory unit cell can work in only one photon-scale energy. [ABSTRACT FROM AUTHOR]