Structure and electrical properties of In2Se3<Mn> layered crystals.

Authors :: Kaminskii, V. M.
Kovalyuk, Z. D.
Zaslonkin, A. V.
Ivanov, V. I.
Source :: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2009, Vol. 12 Issue 3, p290-293, 4p
Publication Year :: 2009
Abstract: Investigations of the crystalline structure and electrical properties of In<subscript>2</subscript>Se<subscript>3</subscript><1 wt. %Mn> and In<subscript>2</subscript>Se<subscript>3</subscript><6 wt. % Mn> crystals have been carried out. We have found formation of a substitutional solid solution for In<subscript>2</subscript>Se<subscript>3</subscript><1 % Mn> single crystals as well as existence of two phases (In<subscript>2</subscript>Se<subscript>3</subscript> and MnIn<subscript>2</subscript>Se<subscript>4</subscript>) in polycrystalline ingots In<subscript>2</subscript>Se<subscript>3</subscript><6 % Mn>. Temperature dependences of the conductivities across (σ<subscript>⊥C</subscript>) and along (σ<subscript>||C</subscript>) the crystallographic c axis were measured in the range of 80 to 400 K. From the anisotropy σ<subscript>⊥C</subscript>/σ<subscript>||C</subscript> of conductivity temperature dependences of the energy barrier value ΔE<subscript>δ</subscript> between the layers were calculated for the crystals under investigations. [ABSTRACT FROM AUTHOR]