Back to Search
Start Over
Applicability Limits of the Two-frequency Capacitance Measurement Technique for the Thickness Extraction of Ultrathin Gate Oxide.
- Source :
- IEEE Transactions on Semiconductor Manufacturing; May2002, Vol. 15 Issue 2, p209, 5p, 4 Black and White Photographs, 1 Diagram, 8 Graphs
- Publication Year :
- 2002
-
Abstract
- Focuses on several techniques for the extraction of gate dielectric layer thickness from capacitance-voltage (CV) characteristics. Analysis on the thickness extraction of ultrathin gate oxide; Determination of direct tunneling currents through gate insulator; Guidelines for performing two-frequency CV analysis.
- Subjects :
- DIELECTRICS
OXIDES
Subjects
Details
- Language :
- English
- ISSN :
- 08946507
- Volume :
- 15
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Semiconductor Manufacturing
- Publication Type :
- Academic Journal
- Accession number :
- 6925086
- Full Text :
- https://doi.org/10.1109/66.999594