The influence of Σ3 twin boundaries on the formation of radiation-induced defect clusters in nanotwinned Cu.

We investigate the collective effect of a high volume fraction of σ3 twin boundaries on the response of nanotwinned Cu to high dose He implantation near room temperature and find that they do not curtail the formation of vacancy and interstitial clusters. This result is rationalized through atomistic modeling, which shows that point defects at these boundaries have nearly identical properties to those in pure fcc Cu. [ABSTRACT FROM AUTHOR]