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High Temperature Inverter for Aerospace Application.

Authors :
Dubois, Fabien
Risaletto, Damien
Robutel, Rémi
Morel, Hervé
Meuret, Régis
Bergogne, Dominique
Source :
Advancing Microelectronics; Jul2011, Vol. 38 Issue 4, p24-29, 5p, 3 Color Photographs, 4 Diagrams, 1 Chart, 10 Graphs
Publication Year :
2011

Abstract

This paper reports the design, the fabrication and experimental performances of a 2 kW, 20 kHz, High Temperature, Three- Phase, all-SiC JFET Voltage Fed Inverter (VFI). The inverter includes a specific JFET driver circuit and a DC-link capacitor. All these elements have been validated over a wide ambient temperature range, between 25 °C and 200 °C. The power device used, a 1200 V, 15 A, JFET from SiCED has been characterized up to 200 °C. Additionally, an innovative and reliable protection circuit for normally-on devices is also presented and validated. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
23807008
Volume :
38
Issue :
4
Database :
Complementary Index
Journal :
Advancing Microelectronics
Publication Type :
Periodical
Accession number :
67620273