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High Temperature Inverter for Aerospace Application.
- Source :
- Advancing Microelectronics; Jul2011, Vol. 38 Issue 4, p24-29, 5p, 3 Color Photographs, 4 Diagrams, 1 Chart, 10 Graphs
- Publication Year :
- 2011
-
Abstract
- This paper reports the design, the fabrication and experimental performances of a 2 kW, 20 kHz, High Temperature, Three- Phase, all-SiC JFET Voltage Fed Inverter (VFI). The inverter includes a specific JFET driver circuit and a DC-link capacitor. All these elements have been validated over a wide ambient temperature range, between 25 °C and 200 °C. The power device used, a 1200 V, 15 A, JFET from SiCED has been characterized up to 200 °C. Additionally, an innovative and reliable protection circuit for normally-on devices is also presented and validated. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 23807008
- Volume :
- 38
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Advancing Microelectronics
- Publication Type :
- Periodical
- Accession number :
- 67620273