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New air-stable solution-processed organic n-type semiconductors based on sulfur-rich core-expanded naphthalene diimidesElectronic Supplementary Information (ESI) available: UV-Vis aborsportion, TGA analysis, theoretical calculations data, 1H NMR and 13C NMR for both compounds. See DOI: 10.1039/c1jm13637b
- Source :
- Journal of Materials Chemistry; Nov2011, Vol. 21 Issue 44, p18042-18048, 7p
- Publication Year :
- 2011
-
Abstract
- Among the reported organic n-type semiconductors naphthalene diimide (NDI) derivatives have received more and more attention. In this paper, we report two sulfur-rich expanded NDI derivatives 1and 2containing 1,3-dithiole-2-thione-4,5-dithiolate and 1,3-dithiole-2-one-4,5-dithiolate units, respectively. Electrochemical, absorption, spectral and theoretical calculation studies show that LUMO energies of 1and 2are lower than that of a typical NDI without functional substitution. OFET devices based on thin-films of 1and 2which can be easily solution-processed are fabricated with conventional techniques. The performance of OFET devices of 1and 2can be significantly improved by fast annealing (about 30 s) their thin-films in air, with high on/off ratios (106ā107) and relatively high electron mobilities of up to 0.05 and 0.04 cm2Vā1sā1, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09599428
- Volume :
- 21
- Issue :
- 44
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry
- Publication Type :
- Academic Journal
- Accession number :
- 66917015
- Full Text :
- https://doi.org/10.1039/c1jm13637b